Ultrafast Electron Microscopy of Nanoscale Charge Dynamics in Semiconductors
arXiv:2206.02556 · doi:10.1021/acsnano.2c10481
Abstract
The ultrafast dynamics of charge carriers in solids plays a pivotal role in emerging optoelectronics, photonics, energy harvesting, and quantum technology applications. However, the investigation and direct visualization of such non-equilibrium transport phenomena remains as a long-standing challenge, owing to the nanometer-femtosecond spatio-temporal scales at which the charge carriers evolve. Here, we propose and demonstrate a novel interaction mechanism enabling nanoscale imaging of the femtosecond dynamics of charge carriers in solids. This imaging modality, which we name charge dynamics electron microscopy (CDEM), exploits the strong interaction between terahertz (THz) electromagnetic near fields produced by the moving charges and synchronized free-electron pulses in an ultrafast scanning transmission electron microscope. The measured free-electron energy at different spatio-temporal coordinates allows us to directly retrieve the THz near-field amplitude and phase, from which we reconstruct movies of the generated charges by comparison with microscopic theory. The introduced CDEM technique thus allows us to investigate previously inaccessible spatio-temporal regimes of charge dynamics in solids, for example revealing new insight into the photo-Dember effect, showing oscillations of photo-generated electron-hole distributions inside a semiconductor. Our work lays the foundation for exploring a wide range of previously inaccessible charge-transport phenomena in condensed matter using ultrafast electron microscopy.
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- Quantum state preparation and readout with modulated electrons
- Influence of Photoemission Geometry on Timing and Efficiency in 4D Ultrafast Electron Microscopy
- Generation and control of localized terahertz fields in photoemitted electron plasmas