Electrical switching of a moiré ferroelectric superconductor

Abstract

Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements, superconducting field-effect transistors (FETs), and gate-tunable qubits. Superconducting FETs operate through continuous tuning of carrier density, but there has not yet been a bistable superconducting FET, which could serve as a new type of cryogenic memory element. Recently, unusual ferroelectricity in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride (BN) gate dielectrics was discovered. Here, we report the observation of ferroelectricity in magic-angle twisted bilayer graphene (MATBG) with aligned BN layers. This ferroelectric behavior coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic, and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new moiré ferroelectric superconductor into highly tunable superconducting electronics.

References in corpus (12)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Stacking-engineered ferroelectricity in bilayer boron nitride
• Flat Bands in Slightly Twisted Bilayer Graphene
• Interfacial Ferroelectricity by van-der-Waals Sliding
• Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
• Continuum Model of the Twisted Bilayer
• Tunable Supercurrent Through Semiconductor Nanowires
• Flavour Hund's Coupling, Correlated Chern Gaps, and Diffusivity in Moiré Flat Bands
• Gate-Defined Josephson Junctions in Magic-Angle Twisted Bilayer Graphene
• Highly Tunable Junctions and Nonlocal Josephson Effect in Magic Angle Graphene Tunneling Devices
• A Tunable Monolithic SQUID in Twisted Bilayer Graphene
• Magnetic Josephson Junctions and Superconducting Diodes in Magic Angle Twisted Bilayer Graphene

Cited by in corpus (18)

• Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
• Unveiling the origin of unconventional moire ferroelectricity
• Ferroelectricity-tuned band topology and superconductivity in two-dimensional materials and related heterostructures
• Moire synaptic transistor for homogeneous-architecture reservoir computing
• Ferroelectric tuning of superconductivity and band topology in a two-dimensional heterobilayer
• Layer-dependent electromechanical response in twisted graphene moiré superlattices
• Band gap formation in commensurate twisted bilayer graphene/hBN moiré lattices
• Disorder-Induced Delocalization in Magic-Angle Twisted Bilayer Graphene
• Plasmonic polarization sensing of electrostatic superlattice potentials
• Imaging the Sub-Moiré Potential Landscape using an Atomic Single Electron Transistor
• On the origin of anomalous hysteresis in graphite/boron nitride transistors
• The interplay of ferroelectricity and magneto-transport in non-magnetic moiré superlattices
• Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
• Self-consistent tensor network method for correlated super-moiré matter beyond one billion sites
• Electrically driven plasmon-polaritonic bistability in Dirac electron tunneling transistors
• Proximity Effects Between the Graphene Quasicrystal and Magic-Angle Twisted Bilayer Graphene
• Shear-Mode Raman Imaging of Ferroelectric Switching in Multilayer 3$R$-MoS${}_2$
• Localization and topological signatures under periodic twisting