Identifying diverging-effective mass in MOSFET and ${}^3$He systems

Abstract

Emerging devices such as a neuromorphic device and a qubit can use the Mott transition phenomenon, but in particular, the diverging mechanism of the phenomenon remains to be clarified. The diverging-effective mass near Mott insulators was measured in strongly correlated Mott systems such as a fermion ${}^3$He and a Si metal-oxide-semiconductor-field-effect transistor, and is closely fitted by the effective mass obtained by the extension of the Brinkman-Rice(BR) picture, $m^{\ast }/m=1/[1-(U/U_c{)}^2]=1/(1-{\kappa }_{BR}^2{\rho }^4)$ when ${\kappa }_{BR}^2\approx 1(\ne$1), where $0<U/U_c={\kappa }_{BR}{\rho }^2<1$, correlation strength is ${\kappa }_{BR}$, band-filling is $\rho$. Its identification is a percolation of a constant mass in the Brinkman-Rice picture. Over ${\kappa }_{BR}\approx 0.96$ is evaluated.

4 pages, 2 figures. This was presented and accepted in ICEIC 2022 Conference held on 6th-9th of February in 2022 at Grand Hyatt Jeju in Republic of Korea