Radiation damage uniformity in a SiPM

Abstract

A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and breakdown voltage of SiPMs exposed to a reactor neutron fluence up to $\hat{I}¦$ = 5e13 cm${}^{-2}$. The cell has a pitch of 15 $\hat{I}¼$m. Results of the measurements and analysis of the IV-curves are presented. Impact of the self-heating effect was investigated. The radiation damage uniformity of 1 cell and 120 cells was checked up to $U_{ov}$ = 1.7 V. Fluence dependence of the breakdown voltage from the current measurements $U_{bd}^{IV}$ was extracted and compared to that of the breakdown voltage from the gain measurements $U_{bd}^G$.

arXiv admin note: text overlap with arXiv:2111.00483