Electrically switchable tunneling across a graphene pn junction: evidence for canted antiferromagnetic phase in $\nu =0$ state

Abstract

The ground state of a graphene sheet at charge neutrality in a perpendicular magnetic field remains enigmatic, with various experiments supporting canted antiferromagnetic, bond ordered, and even charge density wave phases. A promising avenue to elucidating the nature of this state is to sandwich it between regions of different filling factors, and study spin-dependent tunneling across the edge modes at the interfaces. Here we report on tunnel transport through a $\nu =0$ region in a graphite-gated, hexagonal boron nitride ($hBN$) encapsulated monolayer graphene device, with the $\nu =0$ strip sandwiched by spin-polarized $\nu =\pm 1$ quantum Hall states. We observe finite tunneling ($t\sim 0.3-0.6$) between the $\nu =\pm 1$ edges at not too small magnetic fields ($B>3T$) and low tunnel bias voltage ($<30-60\mu V$), which is surprising because electrons at the edge states nominally have opposite spins. Hartree-Fock calculations elucidate these phenomena as being driven by the formation of a CAF order parameter in the $\nu =0$ region at zero bias (for wide enough junctions) leading to non-orthogonal spins at the edges. Remarkably, this tunneling can be controllably switched off by increasing bias; bias voltage leads to a pileup of charge at the junction, leading to a collapse of the CAF order and a suppression of the tunneling.