Interface collisions with diffusive mass transport

Abstract

We report on a linear Langevin model that describes the evolution of the roughness of two interfaces that move towards each other and are coupled by a diffusion field. This model aims at describing the closing of the gap between two two-dimensional material domains during growth, and the subsequent formation of a rough grain boundary. We assume that deposition occurs in the gap between the two domains and that the growth units diffuse and may attach to the edges of the domains. These units can also detach from edges, diffuse, and re-attach elsewhere. For slow growth, the edge roughness increases monotonously and then saturates at some equilibrium value. For fast growth, the roughness exhibits a maximum just before the collision between the two interfaces, which is followed by a minimum. The peak of the roughness can be dominated by statistical fluctuations or by edge instabilities. A phase diagram with three regimes is obtained: slow growth without peak, peak dominated by statistical fluctuations, and peak dominated by instabilities. These results reproduce the main features observed in Kinetic Monte Carlo simulations.

arXiv comment18 pages, 16 Figures

References in corpus (9)

• Evolution of graphene growth on Cu and Ni studied by carbon isotope labeling
• Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
• Electronic transport in polycrystalline graphene
• Anomalous Strength Characteristics of Tilt Grain Boundaries in Graphene
• First-Principles Thermodynamics of Graphene Growth on Cu Surface
• Origin of the Mosaicity in Graphene Grown on Cu(111)
• Thermal boundary conductance across rough interfaces probed by molecular dynamics
• Controlling anisotropy in 2D microscopic models of growth
• Interface Collisions

Cited by in corpus (1)

• Equilibrium return times of small fluctuating clusters and vacancies