paper

The electronic structure of -HgS via calculations

arXiv:2203.15831

Abstract

The electronic structure of the zincblende -HgS is not well understood. Previous first-principles calculations using fully-relativistic density functional theory and many-body perturbation theory in the fully-relativistic approach have predicted an inverted, topologically non-trivial ordering of these states, with the -like state occupied. However, other calculations using the approach in which spin-orbit coupling is added perturbatively ("+SOC") predict the - hybridized and states to be occupied and the state to be unoccupied, suggesting that -HgS is a topologically trivial small band gap semiconductor. In the present work, a plane-wave pseudopotential fully-relativistic calculation finds a band ordering in agreement with the previous +SOC calculations. The calculated band gap is 0.10 eV and the electron effective mass is 0.07 , in good agreement with experiment.