G-CoReCCD: a GPU-based simulator of the charge transport in fully-depleted CCDs

Abstract

We introduce a simulator of charge transport in fully-depleted, thick CCDs that include Coulomb repulsion between carriers. The calculation of this long-range interaction is highly intensive computationally, and only a few thousands of carriers can be simulated in reasonable times using regular CPUs. G-CoReCCD takes advantage of the high number of multiprocessors available in a graphical processing unit (GPU) to parallelize the operations and thus achieve a massive speedup. We can simulate the path inside the CCD bulk for up to hundreds of thousands of carriers in only a few hours using modern GPUs.

6 pages, 6 figures, presented at SPIE Future Sensing Technologies 2020

References in corpus (3)

• Evidence for self-interaction of charge distribution in charge-coupled devices
• G-CoReCCD: a GPU-based simulator of the charge transport in fully-depleted CCDs
• Simulated Thick, Fully-Depleted CCD Exposures Analyzed with Deep Learning Techniques

Cited by in corpus (1)

• G-CoReCCD: a GPU-based simulator of the charge transport in fully-depleted CCDs