Influence of the Pd-Si ratio on the valence transition in EuPd${}_2$Si${}_2$ single crystals

Abstract

Single crystals of intermediate valent EuPd${}_2$Si${}_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd${}_{1-m}$Si${}_m$)${}_2$Si${}_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition affects the temperature $T_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd${}_2$Si${}_2$ and explain the different reported values of $T_v$.

References in corpus (1)

• Pressure-induced volume-collapsed tetragonal phase of CaFe2As2 as seen via neutron scattering

Cited by in corpus (7)

• Microscopic analysis of the valence transition in tetragonal EuPd${}_2$Si${}_2$
• Pressure study on the interplay between magnetic order and valence-change crossover in EuPd${}_2$(Si${}_{1-x}$Ge${}_x$)${}_2$
• From valence fluctuations to long-range magnetic order in EuPd${}_2$(Si${}_{1-x}$Ge${}_x$)${}_2$ single crystals
• Strong electron-phonon coupling and enhanced phonon Grüneisen parameters in valence-fluctuating metal EuPd${}_2$Si${}_2$
• Clamping effect on temperature-induced valence transition in epitaxial EuPd${}_2$Si${}_2$ thin films grown on MgO(001)
• Epitaxial thin films of binary Eu-compounds close to a valence transition
• Photoemission insights into lanthanide-based crystals