Influence of the Pd-Si ratio on the valence transition in EuPd${}_2$Si${}_2$ single crystals

Abstract

Single crystals of intermediate valent EuPd${}_2$Si${}_2$ were grown from an Eu-rich melt by the Bridgman as well as the Czochralski technique. The chemical and structural characterization of an extracted single crystalline Czochralski-grown specimen yielded a slight variation of the Si-Pd ratio along the growth direction and confirms the existence of a finite Eu(Pd${}_{1-m}$Si${}_m$)${}_2$Si${}_2$ homogeneity range. The thorough physical characterization carried out on the same crystal showed that this tiny variation in the composition affects the temperature $T_v$ at which the valence transition occurs. These experiments demonstrate a strong coupling between structural and physical properties in the prototypical valence-fluctuating system EuPd${}_2$Si${}_2$ and explain the different reported values of $T_v$.

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