High-frequency traveling-wave phononic cavity with sub-micron wavelength

Abstract

Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling phononic resonator based on high-acoustic-index-contrast mechanism is realized in GaN-on-Sapphire with a frequency up to 5 GHz, which matches the typical superconducting qubit frequency. A sixfold increment in quality factor was found when temperature decreases from room temperature ($Q=5000$) to $7\mathrm{K}$ ($Q=30000$) and thus a frequency-quality factor product of $1.5\times 10^{14}$ is obtained. Higher quality factors are available when the fabrication process is further optimized. Our system shows great potential in hybrid quantum devices via circuit quantum acoustodynamics.

References in corpus (3)

• Propagating phonons coupled to an artificial atom
• Phonon-mediated quantum state transfer and remote qubit entanglement
• Coupling a Surface Acoustic Wave to an Electron Spin in diamond via a Dark State

Cited by in corpus (8)

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• Optomechanical ring resonator for efficient microwave-optical frequency conversion
• Thermal Modulation of Gigahertz Surface Acoustic Waves on Lithium Niobate
• Low-loss GHz frequency phononic integrated circuits in Gallium Nitride for compact radio-frequency acoustic wave devices
• Proposal for stable atom trapping on a GaN-on-Sapphire chip
• A soft-clamped topological waveguide for phonons
• Merging mechanical bound states in the continuum in high-aspect-ratio phononic crystal gratings
• Tunable coupling of a quantum phononic resonator to a transmon qubit with flip-chip architecture