Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface
arXiv:2202.02655 · doi:10.1016/j.apsusc.2020.147360
Abstract
Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.
arXiv comment24 pages, 8 figures
References in corpus (16)
- Review: Semiconductor Quantum Light Sources
- Electron spin decoherence in quantum dots due to interaction with nuclei
- Charge noise and spin noise in a semiconductor quantum device
- A solid-state entangled photon pair source with high brightness and indistinguishability
- Nanoscale optical positioning of single quantum dots for bright and pure single-photon emission
- On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability
- Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot
- Strain-Tunable GaAs Quantum dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand
- Low-Noise GaAs Quantum Dots for Quantum Photonics
- Entanglement swapping with photons generated on-demand by a quantum dot
- Semiconductor quantum dots as an ideal source of polarization entangled photon pairs on-demand: a review
- Direct observation of nanofabrication influence on the optical properties of single self-assembled InAs/GaAs quantum dots
- Phonon Decoherence of Quantum Dots in Photonic Structures: Broadening of the Zero-Phonon Line and the Role of Dimensionality
- Resolving the temporal evolution of line broadening in quantum emitters
- The effect of photo-generated carriers on the spectral diffusion of a quantum dot coupled to a photonic crystal cavity
- Hybrid metal-dielectric nanocavity for enhanced light-matter interactions
Cited by in corpus (5)
- GaAs quantum dots grown by droplet etching epitaxy as quantum light sources
- Accuracy of the quantum regression theorem for photon emission from a quantum dot
- Laser-induced spectral diffusion and excited-state mixing of silicon T centres
- A deterministic approach for integrating an emitter in a nanocavity with subwavelength light confinement
- Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity