High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources

Abstract

We present two compact ultrafast electron injector designs with integrated focusing that provide high peak brightness of up to $1.9\ast 10^{12}A/m^{2}S{r}^2$ with 10s of electrons per laser pulse using silicon carbide electrodes and silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV immersion lens electron source and a 57 keV immersion lens electron source with a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm used in DC electron sources. The brightness of the electron sources is measured alongside start-to-end simulations including space charge effects. These sources are suitable for dielectric laser accelerator experiments, ultrafast electron diffraction, and other applications where a compact high brightness electron source is required.

arXiv comment8 pages, 5 figures

References in corpus (10)

• A Femtosecond Nanometer Free Electron Source
• Ultrafast transmission electron microscopy using a laser-driven field emitter: femtosecond resolution with a high coherence electron beam
• Dielectric Laser Acceleration
• Compression of sub-relativistic space-charge-dominated electron bunches for single-shot femtosecond electron diffraction
• Strong-field above-threshold photoemission from sharp metal tips
• Compact femtosecond electron diffractometer with 100 keV electron bunches approaching the single-electron pulse duration limit
• Alternating Phase Focusing for Dielectric Laser Acceleration
• Femtosecond laser-induced electron emission from nanodiamond-coated tungsten needle tips
• High brightness ultrafast Transmission Electron Microscope based on a laser-driven cold-field emission source: principle and applications
• Empirical comparison of high gradient achievement for different metals in DC and pulsed mode