Thin-Film Lithium Niobate based Dual-Polarization IQ modulator for Single-Carrier 1.6 Tb/s Transmission
arXiv:2201.09730 · doi:10.1063/5.0097296
Abstract
We successfully demonstrate a monolithic integrated dual-polarization (DP) IQ modulator based on thin-film lithium niobate (TFLN) platform with a silicon substrate, which consists of IQ modulators, spot-size converters (SSCs) and a polarization rotator combiner (PRC). After coupled with polarization maintaining fibers, the measured insertion loss of the modulator is 12 dB. In addition, we experimentally achieve a single-carrier 1.6 Tb/s net bitrate transmission.