Insights to negative differential resistance in \texorpdfstring{MoS\textsubscript{2}}{MoS2} Esaki diodes: a first-principles perspective

Abstract

\ce{MoS_2} is a two dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field effect transistors. However, such a widely accepted concept has never been supported up by theoretical investigations based on first principles. In this work, using density functional theory, in conjunction with non-equilibrilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack \ce{MoS_2} $p$-$i$-$n$ junction configurations. We demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and complex band analysis are also examined for a thorough understanding of Esaki Diodes.

arXiv comment8 pages, 8 figures

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Cited by in corpus (1)

• Computational design of NDR tunnel diodes with high peak-to-valley current ratio based on two-dimensional cold metals: The case of NbSi${}_2$N${}_4$/HfSi${}_2$N${}_4$/NbSi${}_2$N${}_4$ lateral heterojunction diode