Rb-induced (3x1) and (6x1) reconstructions on Si(111)-(7x7): A LEED and STM study
arXiv:2201.00735 · doi:10.1016/j.susc.2021.122011
Abstract
We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Sample analysis via LEED allowed to observe for the first time a Rb/Si(111)-(6x1) reconstruction. The STM image analysis allowed to obtain the first real space characterization of the Rb/Si(111)-(3x1) surface. In addition, STM provided a direct and local information on the surface arrangement as well as further insights on the interaction between Si and Rb atoms and on the growth dynamics.
arXiv comment23 pages, 8 figures, for associated Supporting Information see this URL https://ars.els-cdn.com/content/image/1-s2.0-S0039602821002144-mmc1.pdf
References in corpus (5)
- Quantum computing with atomic qubits and Rydberg interactions: Progress and challenges
- Theory of the "honeycomb chain-channel" reconstruction of Si(111)3x1
- Miniaturized optical frequency standard for next-generation portable optical clocks
- Unveiling new systematics in the self-assembly of atomic chains on Si(111)
- Quantitative LEED I-V and ab initio study of the Si(111)-3x2-Sm surface structure and the missing half order spots in the 3x1 diffraction pattern