Molecular Beam Epitaxy growth of MoTe${}_2$ on Hexagonal Boron Nitride

Abstract

Hexagonal boron nitride has already been proven to serve as a decent substrate for high quality epitaxial growth of several 2D materials, such as graphene, MoSe${}_{\text{2}}$, MoS${}_{\text{2}}$ or WSe${}_{\text{2}}$. Here, we present for the first time the molecular beam epitaxy growth of MoTe${}_{\text{2}}$ on atomically smooth hexagonal boron nitride (hBN) substrate. Occurrence of MoTe${}_{\text{2}}$ in various crystalline phases such as distorted octahedral 1T' phase with semimetal properties or hexagonal 2H phase with semiconducting properties opens a possibility of realisation of crystal-phase homostructures with tunable properties. Atomic force microscopy studies of MoTe${}_{\text{2}}$ grown in a single monolayer regime enable us to determine surface morphology as a function of the growth conditions. The diffusion constant of MoTe${}_{\text{2}}$ grown on hBN can be altered 5 times by annealing after the growth, reaching about 5 $\cdot$ 10${}^{-6}$ cm${}^2$/s. Raman spectroscopy results suggest a coexistence of both 2H and 1T' MoTe${}_{\text{2}}$ phases in the studied samples.

8 pages, 4 figures

References in corpus (1)

• The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2

Cited by in corpus (3)

• Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe${}_2$
• Photoluminescence efficiency of MBE-grown MoSe${}_2$ monolayers featuring sharp excitonic lines and diverse grain structures
• Molecular beam epitaxy growth of cadmium telluride structures on hexagonal boron nitride