Gate-tunability of the superconducting state at the $EuO/KTa{O}_3(111)$ interface

Abstract

The recent discovery of superconducting interfaces in the $KTa{O}_3(111)$-based heterostructures is intriguing, since a much higher superconducting critical temperature (TC ~ 2 K) is achieved compared to that in the $SrTi{O}_3$ heterostructures (~ 300 mK). In this paper, we report the superconducting properties of $EuO/KTa{O}_3(111)$ interface as a function of the interface carrier density ($n_s$). The maximum T_C is observed to be ~ 2 K at $n_s$ ~ $1\times 10^{14}$ cm-2. In addition, we show that the critical current density and the upper critical magnetic field can be effectively tuned by the back gate voltage. Interestingly, the gate dependence of the upper critical magnetic field exhibits a trend opposite to that of TC in the underdoped region, suggesting a relatively larger Cooper pairing potential.

References in corpus (7)

• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Highly crystalline 2D superconductors
• Two-dimensional superconductivity at the surfaces of KTaO3 gated with ionic liquid
• Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface
• Observation of two-dimensional superconductivity at the LaAlO3/KTaO3(110) heterointerface
• Superconductor-metal quantum transition at the EuO-KTaO3 interface
• Upper critical field of electron-doped Pr${}_{2-x}$Ce${}_x$CuO${}_{4-\delta }$ in parallel magnetic fields

Cited by in corpus (6)

• Tunable superconductivity at the oxide-insulator/KTaO${}_3$ interface and its origin
• Orientation-dependent electron-phonon coupling in interfacial superconductors LaAlO3/KTaO3
• Universally enhanced superconductivity and coexisting ferroelectricity at oxide interfaces
• Anisotropic vortex motion and two-dimensional superconducting transition
• Effect of Underlayer Induced Charge Carrier Substitution on the Superconductivity of Ti40V60 Alloy Thin Films
• Orientation-dependent superconductivity and electronic structure of the rare-earth metal/KTaO3 interfaces