Gate-tunability of the superconducting state at the interface
arXiv:2111.06081 · doi:10.1103/PhysRevB.104.184505
Abstract
The recent discovery of superconducting interfaces in the -based heterostructures is intriguing, since a much higher superconducting critical temperature (TC ~ 2 K) is achieved compared to that in the heterostructures (~ 300 mK). In this paper, we report the superconducting properties of interface as a function of the interface carrier density (). The maximum T_C is observed to be ~ 2 K at ~ cm-2. In addition, we show that the critical current density and the upper critical magnetic field can be effectively tuned by the back gate voltage. Interestingly, the gate dependence of the upper critical magnetic field exhibits a trend opposite to that of TC in the underdoped region, suggesting a relatively larger Cooper pairing potential.