paper

Experimental and computational approaches to study the high temperature thermoelectric properties of novel topological semimetal CoSi

arXiv:2111.02189 · doi:10.1088/1361-648X/ac655a

Abstract

Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters of a = b = c = 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of 81 V/K at room temperature. The first increases till 560 K (93 V/K) and then decreases up to 800 K (84 V/K) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity, (thermal conductivity, ) shows the monotonic decreasing (increasing) behaviour with the values of 5.2 (12.1 W/m-K) and 3.6 (14.2 W/m-K) at 300 K and 800 K, respectively. The exhibits the temperature dependency as, . The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the above 560 K and change in the slope of around 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time is computed which shows temperature dependency of . Present study suggests that electronic band-structure obtained from DFT provides reasonably good estimate of the transport coefficients of CoSi in the high temperature region of K.

References in corpus (3)

Cited by in corpus (2)