Multiple photodetachment of silicon anions via K-shell excitation and ionization

Abstract

Experimental cross sections for $m$-fold photodetachment ($m=3-6$) of silicon anions via $K$-shell excitation and ionization were measured in the photon-energy range of 1830-1900 eV using the photon-ion merged-beams technique at a synchrotron light source. All cross sections exhibit a threshold behavior that is masked by pre-threshold resonances associated with the excitation of a $1s$ electron to higher, either partly occupied or unoccupied atomic subshells. Results from multi-configuration Dirac-Fock (MCDF) calculations agree with the experimentally derived cross sections for photo-absorption if small energy shifts are applied to the calculated resonance positions and detachment thresholds. Moreover, a systematic approach is applied for modeling the deexcitation cascades that set in after the initial creation of a $K$-shell hole. The resulting product charge-state distributions compare well with the measured ones for direct $K$-shell detachment but less well for resonant $K$-shell excitation. The present results are potentially useful for identifying silicon anions in cold plasmas such as interstellar gas clouds.

arXiv comment8 pages, 4 figures

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Cited by in corpus (3)

• High-Precision Transition Energy Measurements of Neon-like Fe XVII Ions
• Near K-Edge Photoionization and Photoabsorption of Singly, Doubly, and Triply Charged Silicon Ions
• Multiple Photodetachment of Oxygen Anions via K-Shell Excitation and Ionization: Direct Double-Detachment Processes and Subsequent Deexcitation Cascades