Vapor transport growth of MnBi2Te4 and related compounds

Abstract

Motivated by fine tuning of the magnetic and topological properties of MnBi${}_2$Te${}_4$ via defect engineering, in this work, we report the crystal growth of MnBi${}_2$Te${}_4$ and related compounds using vapor transport method and characterization of vapor transported crystals by measuring elemental analysis, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi${}_2$Te${}_4$ single crystals, I${}_2$, MnI${}_2$ , MnCl${}_2$, TeCl${}_4$, or MoCl${}_5$ are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. MnBi${}_2$Te${}_4$ crystals can be obtained in the temperature range 500${}^{\circ }$C-590${}^{\circ }$C using I${}_2$ as the transport agent. We further successfully grow MnSb${}_2$Te${}_4$, MnBi${}_{2-x}$Sb${}_x$Te${}_4$, and Sb-doped MnBi${}_4$Te${}_7$ crystals. A small temperature gradient $<$20${}^{\circ }$C between the hot and cold ends of the growth cmpoule is critical for the successful crystal growth of MnBi${}_2$Te${}_4$ and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tuning the magnetic and topological properties of these intrinsic magnetic topological insulators.

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