Investigation of photon emitters in Ce-implanted hexagonal boron nitride

Abstract

Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.

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Cited by in corpus (3)

• Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes
• Creation and Microscopic Origins of Single-Photon Emitters in Transition Metal Dichalcogenides and Hexagonal Boron Nitride
• Nanocavity-mediated Purcell enhancement of Er in TiO${}_2$ thin films grown via atomic layer deposition