Phonon-Mediated Superconductivity near the Lattice Instability in Hole-doped Hydrogenated Monolayer Hexagonal Boron Nitride
arXiv:2110.00105
Abstract
Employing the density-functional theory with local density approximation, we show that the fully hydrogenated monolayer-hexagonal boron nitride (HBN) has a direct-band gap of 2.96 eV in the blue-light region while the pristine -BN has a wider indirect-band gap of 4.78 eV. The hole-doped HBN is stable at low carrier density () but becomes dynamically unstable at higher . We predict that it is a phonon-mediated superconductor with a transition temperature () which can reach 31 K at of holes cm near the lattice instability. The could be enhanced up to 82 K by applying a biaxial tensile strain at 6 % along with doping at of 10 holes cm close to a new lattice instability.
14 pages, main text (4 figures), supplemental material (9 figures)