High order harmonic generation in semiconductors driven at near- and mid-IR wavelengths

Abstract

We study high order harmonics generation (HHG) in crystalline silicon and diamond subjected to near and mid-infrared laser pulses. We employ time-dependent density functional theory and solve the time-dependent Kohn-Sham equation in the single-cell geometry. We demonstrate that clear and clean HHG spectra can be generated with careful selection of the pulse duration. In addition, we simulate dephasing effects in a large silicon super-cell through displacement of atomic positions prepared by a molecular dynamics simulation. We compare our results with the previous calculations by Floss et al. [arXiv:1705.10707] [Phys. Rev. A 97, 011401(R) (2018)] on Diamond at 800 nm and by Tancogne-Dejean et al. [arXiv:1609.09298] [Phys. Rev. Lett. 118, 087403 (2017)] on Si at 3000 nm.

arXiv commentAccepted to Phys. Rev. B

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Cited by in corpus (8)

• Revealing Ultrafast Phonon Mediated Inter-Valley Scattering through Transient Absorption and High Harmonic Spectroscopies
• Spin high-harmonic generation through terahertz laser-driven phonons
• Propagation effects in high-harmonic generation from dielectric thin films
• Enhanced energy deposition and carrier generation in silicon induced by two-color intense femtosecond laser pulses
• An explicit formula for high-order sideband polarization by extreme tailoring of Feynman path integrals
• High-harmonic generation in zinc oxide subjected to intense mid-infrared femtosecond laser pulse
• High-order harmonic generation from an atom in a disordered environment
• Transient Pauli blocking in a InN film as a mechanism for broadband ultrafast optical switching