Emergent interlayer magnetic order via strain-induced orthorhombic distortion in the 5d Mott insulator Sr2IrO4

Abstract

We report a La2CuO4-like interlayer antiferromagnetic order in Sr2IrO4 films with large orthorhombic distortion (> 1.5%). The biaxial lattice strain in epitaxial heterostructures of Sr2IrO4/Ca3Ru2O7 lowers the crystal symmetry of Sr2IrO4 from tetragonal (C4) to orthorhombic (C2), guiding the Ir 5d Jeff = 1/2 pseudospin moment parallel to the elongated b-axis via magnetic anisotropy. From resonant X-ray scattering experiments, we observed an antiferromagnetic order in the orthorhombic Sr2IrO4 film whose interlayer stacking pattern is inverted from that of the tetragonal Sr2IrO4 crystal. This interlayer stacking is similar to that of the orthorhombic La2CuO4, implying that the asymmetric interlayer exchange interaction along a and b-directions exceeds the anisotropic interlayer pseudo-dipolar interaction. Our result suggests that strain-induced distortion can provide a delicate knob for tuning the long-range magnetic order in quasi-two-dimensional systems by evoking the competition between the interlayer exchange coupling and the pseudo-dipolar interaction.

5 pages, 4 figures

References in corpus (11)

• Novel Jeff = 1/2 Mott State Induced by Relativistic Spin-Orbit Coupling in Sr2IrO4
• The magnetic and crystal structures of Sr2IrO4: A neutron diffraction study
• Neutron scattering study of correlated phase behavior in Sr2IrO4
• Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4
• Crystal structure and high-field magnetism of La2CuO4
• Possible quantum paramagnetism in compressed Sr${}_2$IrO${}_4$
• Rigid platform for applying large tunable strains to mechanically delicate samples
• Selective growth of epitaxial Sr2IrO4 by controlling plume dimensions in pulsed laser deposition
• Comprehensive Control of Metamagnetic Transition of Antiferromagnetic Mott Insulator Sr2IrO4 by in-situ Anisotropic Strain
• Nanoscale Sr${}_2$IrO${}_4$ Freestanding Thin-Films for Flexible Electronics
• Precise control of $J_{\mathrm{eff}}=1/2$ magnetic properties in Sr${}_2$IrO${}_4$ epitaxial thin films by variation of strain and thin film thickness

Cited by in corpus (1)

• Orbital-Selective Spin-Orbit Mott Insulator in Fractional Valence Iridate La${}_3$Ir${}_3$O${}_{11}$