Dielectric response of electron-hole systems. Nondegenerate case and quantum corrections
arXiv:2108.07733 · doi:10.1088/1361-648X/ac2062
Abstract
Analytical results for the dielectric function in RPA are derived for three-, two-, and one-dimensional semiconductors in the weakly-degenerate limit. Based on this limit, quantum corrections are derived. Further attention is devoted to systems with linear carrier dispersion and the resulting Dirac-cone physics.
arXiv comment26 pages, 9 figures, accepted for publication in J. Phys.: Condens. Matter
References in corpus (10)
- The electronic properties of graphene
- Topological Insulators
- Dielectric function, screening, and plasmons in 2D graphene
- Electron-Electron Interactions in Graphene: Current Status and Perspectives
- Dynamical polarization of graphene at finite doping
- Giant Rydberg Excitons in Cuprous Oxide
- Rydberg excitons in the presence of an ultralow-density electron-hole plasma
- Condensation of Excitons in Cu2O at Ultracold Temperatures: Experiment and Theory
- Influence of electron-hole plasma on Rydberg excitons in cuprous oxide
- Quantum many-body effects on Rydberg excitons in cuprous oxide