Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact

Abstract

The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC's 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.

18 pages, 3 figures, including supplementary information with 2 figure

References in corpus (8)

• Non-Abelian Anyons and Topological Quantum Computation
• Fractional statistics in anyon collisions
• Orbital Landau level dependence of the fractional quantum Hall effect in quasi-two dimensional electron layers: finite-thickness effects
• Experimental probe of topological orders and edge excitations in the second Landau level
• Competing ν= 5/2 fractional quantum Hall states in confined geometry
• Quantized charge fractionalization at quantum Hall Y junctions in the disorder-dominated regime
• Density matrix renormalization group study of the $\nu =1/3$ edge states in fractional quantum Hall systems
• Fabry-Pérot interference in a triple-gated quantum point contact

Cited by in corpus (3)

• Half-integer conductance plateau at the $\nu =2/3$ fractional quantum Hall state in a quantum point contact
• Fractional quantum Hall effect at the filling factor $\nu =5/2$
• Anomalous quantized plateaus in two-dimensional electron gas with gate confinement