Synthesis, structure and properties of layered phosphide nitrides ThMnPN ( = Rb, Cs)
arXiv:2107.14375 · doi:10.1002/cjoc.202100341
Abstract
We report the design, synthesis, structure, and properties of two complex layered phosphide nitrides, ThMnPN ( = Rb, Cs), which contain anti-fluorite-type [MnP] bilayers separated by fluorite-type [Th2N2] layers as a result of the intergrowth between AkMnP and ThMnPN. The new compounds are featured with an intrinsic hole doping associated with the interlayer charge transfer and a built-in chemical pressure from the [ThN] layers, both of which are reflected by the changes in the lattice and the atomic position of phosphorus. The measurements of magnetic susceptibility, electrical resistivity, and specific heat indicate existence of local moments as well as itinerant electrons in relation with d-p hybridizations. The expected dominant antiferromagnetic interactions with enhanced d-p hybridizations were demonstrated by the first-principles calculations only when additional Coulomb repulsions are included. The density of states at the Fermi level derived from the specific-heat analysis are 3.5 and 7.5 times of the calculated ones for Ak = Rb and Cs, respectively, suggesting strong electron correlations in the title compounds.
12 pages, 5 figures, 3 tables; Supporting information available on request
References in corpus (8)
- Superconductivity at 43 K in Samarium-arsenide Oxides
- Superconductivity and Crystal Structures of (Ba1-xKx)Fe2As2 (x = 0 - 1)
- Doping-dependent Phase Diagram of LaO{\it M}As ({\it M}=V--Cu) and Electron-type Superconductivity near Ferromagnetic Instability
- Pressure induced superconductivity on the border of magnetic order in MnP
- Superconductivity in KCaFeAsF with Separate Double FeAs Layers
- Electronic structure and Magnetism in BaMnAs and BaMnSb
- Nd induced Mn spin-reorientation transition in NdMnAsO
- The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides