Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi

Abstract

We perform the quantum magnetotransport measurements and first-principles calculations on high quality single crystals of SmAlSi, a new topological Weyl semimetal candidate. At low temperatures, SmAlSi exhibits large non-saturated magnetoresistance (MR)~5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas (SdH) oscillations, where MRs follow the power-law field dependence with exponent 1.52 at low fields (μ0H < 15 T) and linear behavior 1 under high fields (μ0H > 18 T). The analysis of angle dependent SdH oscillations reveal two fundamental frequencies originated from the Fermi surface (FS) pockets with non-trivial π Berry phases, small cyclotron mass and electron-hole compensation with high mobility at 2 K. In combination with the calculated nontrivial electronic band structure, SmAlSi is proposed to be a paradigm for understanding the Weyl fermions in the topological materials.

15 pages, 7 figures

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Cited by in corpus (11)

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• Tuning the nontrivial topological properties of the Weyl semimetal CeAlSi
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• Topological Hall effect in CeAlGe
• Signature of weakly coupled $f$ electrons and conduction electrons in magnetic Weyl semimetal candidates PrAlSi and SmAlSi
• Anomalous symmetry breaking in Weyl semimetal CeAlGe
• Optical signatures of type-II Weyl fermions in the noncentrosymmetric semimetals $R$AlSi ($R$=La, Ce, Pr, Nd, Sm)
• Exotic rare earth-based materials for emerging spintronic technology
• Structural characterization of the candidate Weyl semimetal CeGaGe
• Crystalline electric field excitations in Weyl semimetal \textit{R}AlSi (\textit{R} = Ce, Pr and Nd)