High-speed 2D and 3D mid-IR imaging with an InGaAs camera

Abstract

Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach enables MIR imaging at high pixel densities, the low nonlinear absorption coefficient of Si prevents fast NTA-based imaging at lower illumination doses. Here we overcome this limitation by using InGaAs as the photosensor. Taking advantage of the much higher nonlinear absorption coefficient of this direct bandgap semiconductor, we demonstrate high-speed MIR imaging up to 500 fps with under 1 ms exposure per frame, enabling 2D or 3D mapping without pre- or post-processing of the image.

arXiv comment7 pages, 5 Figures

References in corpus (5)

• Infrared chemical imaging through nondegenerate two-photon absorption in silicon-based cameras
• Mid infrared two-photon absorption in a room-temperature extended-wavelength InGaAs photodetector
• 3-D IR imaging with uncooled GaN photodiodes using nondegenerate two-photon absorption
• Highly sensitive detection for infrared photons by non-degenerate two-photon absorption under mid-infrared pumping
• Bubbles determine the amount of alcohol in Mezcal