Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations
arXiv:2106.12130 · doi:10.1021/acs.nanolett.1c00503
Abstract
Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically- and optically excited localized surface plasmons, we report a much greater (over 1000x) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering. Our measurement results are in excellent agreement with a theoretical model combining electro-optical generation of hot carriers through non-radiative plasmon excitation and hot-carrier relaxation. We also discuss the challenge of distinguishing relative contributions of hot carrier emission and the anti-Stokes electronic Raman process. This observed increase in above-threshold emission in plasmonic systems may open avenues in on-chip nanophotonic switching and hot carrier photocatalysis.
arXiv comment21 pages, 4 figures, plus 27 pages Supporting Info with 7 figures
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Cited by in corpus (5)
- Tuning light emission crossovers in atomic-scale aluminum plasmonic tunnel junctions
- Atomic-scale structural fluctuations of a plasmonic cavity
- Distinguishing thermal from non-thermal ("hot") carries in illuminated molecular junctions
- Quantifying efficiency of remote excitation for surface enhanced Raman spectroscopy in molecular junctions
- On-chip Single-crystal Plasmonic Optoelectronics for Efficient Hot Carrier Collection and Photovoltage Detection