HVPE growth of corundum-structured $α$-Ga$_2$O$_3$ on sapphire substrates with $α$-Cr$_2$O$_3$ buffer layer

S. I. Stepanov; V. I. Nikolaev; A. V. Almaev; A. I. Pechnikov; M. P. Scheglov; A. V. Chikiryaka; B. O. Kushnarev

paper

HVPE growth of corundum-structured $α$ -Ga $_{2}$ O $_{3}$ on sapphire substrates with $α$ -Cr $_{2}$ O $_{3}$ buffer layer

arXiv:2106.09583

Abstract

Gallium oxide films were grown by HVPE on (0001) sapphire substrates with and without $α$ -Cr $_{2}$ O $_{3}$ buffer produced by RF magnetron sputtering. Deposition on bare sapphire substrates resulted in a mixture of $α$ -Ga $_{2}$ O $_{3}$ and $ε$ -Ga $_{2}$ O $_{3}$ phases with a dislocation density of about $2 \cdot 1 0^{10}$ cm $^{- 2}$ . The insertion of $α$ -Ga $_{2}$ O $_{3}$ buffer layers resulted in phase-pure $α$ -Ga $_{2}$ O $_{3}$ films and a fourfold reduction of the dislocation density to $5 \cdot 1 0^{9}$ cm $^{- 2}$ .

7 pages, 1 figure

HVPE growth of corundum-structured α-Ga2​O3​ on sapphire substrates with α-Cr2​O3​ buffer layer

Abstract

HVPE growth of corundum-structured $α$ -Ga $_{2}$ O $_{3}$ on sapphire substrates with $α$ -Cr $_{2}$ O $_{3}$ buffer layer