Linear unsaturated magnetoresistance in YSi single crystal
arXiv:2106.07264 · doi:10.1063/5.0059927
Abstract
Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields, on the YSi single crystal along all three principal crystallographic directions of the orthorhombic crystal structure. For and direction above ~T, mobility fluctuation driven linear magnetoresistance is observed without any sign of saturation up to ~T magnetic field. Anisotropy in the Fermi surface is immanent from the angular dependence of the magnetoresistance. Kohler rule violation is observed in this system and Hall data signifies multiple charge carriers in YSi.
4 pages, 4 figures