Large bulk photovoltaic effect and second-harmonic generation in few-layer pentagonal semiconductors PdS and PdSe
arXiv:2106.06734 · doi:10.1088/1367-2630/ac231c
Abstract
Recently, atomically thin PdSe semiconductors with rare pentagonal Se-Pd-Se monolayers were synthesized and were also found to possess superior properties such as ultrahigh air stability, and high carrier mobility, thus offering a new family of two-dimensional (2D) materials for exploration of 2D semiconductor physics and for applications in advanced opto-electronic and nonlinear photonic devices. In this work, we systematically study the nonlinear optical (NLO) responses [namely, bulk photovoltaic effect (BPVE), second-harmonic generation (SHG) and linear electric-optic (LEO) effect] of noncentrosymmetric bilayer (BL) and four-layer (FL) PdS and PdSe by applying the first-principles density functional theory with the generalized gradient approximation plus scissors-correction. First of all, the shift current conductivity is in the order of 130 A/V, being very high compared to known BPVE materials. Similarly, their injection current susceptibilities are in the order of 10010A/Vs, again being large. Secondly, the SHG coefficients () of these materials are also large, being one order higher than that of the best-known few-layer group 6B transition metal dichalcogenides. For example, the maximum magnitude of can reach 1.410 pm/V for BL PdSe at 1.9 eV and 1.210 pm/V at 3.1 eV for BL PdS. Thirdly we find significant LEO coefficients for these structures in the low photon energy. All these indicate that 2D PdX semiconductors will find promising NLO applications. Fourthly, we find that the large BPVE and SHG of the few-layer PdX structures are due to strong intralayer directional covalent bonding and also 2D quantum confinement.
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