Stimulated emission of plasmon-LO mode in narrow gap HgTe/CdHgTe quantum wells

Abstract

We calculate the dispersion of the plasmon-LO modes taking into account the spatial dispersion of the electronic polarizability. It is shown that stimulated emission of the plasmon-LO mode is possible in the frequency range corresponding to the Reststrahlen band of GaAs both in a 6 nm wide HgTe/CdTe QW and in a 5 nm wide HgTe/Cd0.7Hg0.3Te QW grown on the (013) plane. Due to the anisotropy of the dispersion law for the plasmon-LO mode, the [03-1] direction appears to be optimal for generation.

9 pages, 5 figures,