High electrical conduction of Sb square net in anti-ThCr$_2$Si$_2$ type La$_2$O$_2$Sb thin film grown by multilayer solid-phase epitaxy

Yuki Yamamoto; Hideyuki Kawasoko; Tomoteru Fukumura

doi:10.1039/D1TC00747E

paper

High electrical conduction of Sb square net in anti-ThCr $_{2}$ Si $_{2}$ type La $_{2}$ O $_{2}$ Sb thin film grown by multilayer solid-phase epitaxy

arXiv:2106.04713 · doi:10.1039/D1TC00747E

Abstract

Anti-ThCr $_{2}$ Si $_{2}$ type $R E_{2}$ O $_{2}$ Sb ( $R E$ = rare earth) with Sb square net has shown insulating conduction so far. Here we report the synthesis of La $_{2}$ O $_{2}$ Sb epitaxial thin films for the first time by multilayer solid-phase epitaxy. The valence state of Sb was about -2 evaluated from X-ray photoemission spectroscopy measurement, and the indirect band gap of 0.17 eV was observed. The La $_{2}$ O $_{2}$ Sb epitaxial thin film showed unexpectedly high electrical conduction as a narrow gap semiconductor, whose resistivity at room temperature was approximately ten-thousand-fold lower than that of La $_{2}$ O $_{2}$ Sb bulk polycrystal, attributed to increased carrier mobility probably due to suppressed Sb dimerization.

High electrical conduction of Sb square net in anti-ThCr2​Si2​ type La2​O2​Sb thin film grown by multilayer solid-phase epitaxy

Abstract

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High electrical conduction of Sb square net in anti-ThCr $_{2}$ Si $_{2}$ type La $_{2}$ O $_{2}$ Sb thin film grown by multilayer solid-phase epitaxy