Doping-controlled surface conduction in topological insulators with warping effects
arXiv:2106.03978 · doi:10.1016/j.jmmm.2021.168135
Abstract
Based on a self-consistent -matrix approximation, we explore the influence of magnetic and nonmagnetic doping on the surface electronic states and conductivity of topological insulators. We show that warping parameter has a crucial impact on the density of states and dc conductivity of the doped surfaces. As the warping strength is increased, the surface density of states at high energies is suppressed and the resonant states induced by impurities in the vicinity of the Dirac point gradually disappear. It is found that nonmagnetic impurities break electron-hole symmetry at low warping strength, while the symmetry remains unchanged when the surface is magnetically doped. Our findings reveal that surface conductivity can be controlled by tuning the doping, the direction of external magnetic field and that of impurity magnetic moments. Also, the surface conductivity features in topological insulators with warped energy dispersions are not significantly affected by the presence of impurities compared to that of materials with circular energy contour.
8 pages, 7 figures
References in corpus (11)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Electron transport in disordered graphene
- Time-resolved terahertz dynamics in thin films of the topological insulator BiSe
- Filling of magnetic-impurity-induced gap in topological insulators by potential scattering
- Disorder enabled band structure engineering of a topological insulator surface
- Longitudinal conductivity of massless fermions with tilted Dirac cone in magnetic field
- Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators
- Anisotropic conductivity in magnetic topological insulators
- Chemical and magnetic impurity effects on electronic properties of semiconductor quantum wires
- Quantized electromagnetic response of three-dimensional chiral topological insulators