Doping-dependent metal-insulator transition in a disordered Hubbard model

Abstract

We study the effect of disorder and doping on the metal-insulator transition in a repulsive Hubbard model on a square lattice using the determinant quantum Monte Carlo method. First, with the aim of making our results reliable, we compute the sign problem with various parameters such as temperature, disorder, on-site interactions, and lattice size. We show that in the presence of randomness in the hopping elements, the metal-insulator transition occurs and the critical disorder strength differs at different fillings. We also demonstrate that doping is a driving force behind the metal-insulator transition.

Revised version. Accepted for publication as a Regular Article in Physical Review B

References in corpus (8)

• Two-dimensional Mott-Hubbard electrons in an artificial honeycomb lattice
• Quantum criticality and minimal conductivity in graphene with long-range disorder
• Geometry Dependence of the Sign Problem
• Quantum Monte Carlo Study of an Interaction-Driven Band Insulator to Metal Transition
• Band insulator to Mott insulator transition in a bilayer Hubbard model
• Nuclear magnetic resonance in the heavy fermion superconductors
• Disorder-Induced Stabilization of the Pseudogap in Strongly Correlated Systems
• Probing the bond order wave phase transitions of the ionic Hubbard model by superlattice modulation spectroscopy

Cited by in corpus (6)

• Enhancement of $d$-wave pairing in the striped phase with the nearest neighbour attraction
• Disorder-dependent superconducting pairing symmetry in doped graphene
• Strong ferromagnetic fluctuations in a doped checkerboard lattice
• Breathing-Driven Metal-Insulator Transition in Correlated Kagome Systems
• Doping driven metal-insulator transition in disordered graphene
• Magnetic fluctuation and dominant superconducting pairing symmetry near the tunable Van Hove singularity