Josephson Junctions Via Anodization of Epitaxial Al on an InAs Heterostructure

Abstract

We combine electron beam lithography and masked anodization of epitaxial aluminium to define tunnel junctions via selective oxidation, alleviating the need for wet-etch processing or direct deposition of dielectric materials. Applying this technique to define Josephson junctions in proximity induced superconducting Al-InAs heterostructures, we observe multiple Andreev reflections in transport experiments, indicative of a high quality junction. We further compare the mobility and density of Hall-bars defined via wet etching and anodization. These results may find utility in uncovering new fabrication approaches to junction-based qubit platforms.

4 pages, 4 figures

References in corpus (6)

• Non-Abelian Anyons and Topological Quantum Computation
• Signatures of Majorana fermions in hybrid superconductor-semiconductor nanowire devices
• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction
• Anomalous Fraunhofer Interference in Epitaxial Superconductor-Semiconductor Josephson Junctions
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells