Multi-hole models for deterministically placed acceptor arrays in silicon

Abstract

We compute the electronic structure of acceptor clusters in silicon by using three methods to include electron correlations: the full configuration interaction, the Heitler-London approximation, and the unrestricted Hartree-Fock method. We show both the HL approach and the UHF method are good approximations to the ground state of the full CI calculation for a pair of acceptors and for finite linear chains. The total energies for finite linear chains show the formation of a 4-fold degenerate ground state when there is a weak bond at the end of the chain, which is shown to be a manifold of topological edge states. We identify a change in the angular momentum composition of the ground state at a critical pattern of bond lengths and show it is related to a crossing in the Fock matrix eigenvalues. We also test the symmetry of the UHF solution and compare it to the full CI; the symmetry is broken under almost all the arrangements by the formation of a magnetic state in UHF, and we find further broken symmetries for some particular arrangements related to crossings or potential crossings between the Fock-matrix eigenvalues. We also compute the charge distributions across the acceptors obtained from the eigenvectors of the Fock matrix: with weak bonds at the chain ends, two holes are localized at either end of the chain while the others have a nearly uniform distribution over the middle; this implies the existence of the non-trivial edge states. We apply the UHF method to treat an infinite linear chain with periodic boundary conditions. We find the band structures in the UHF approximation and compute the Zak phases for the occupied Fock-matrix eigenvalues; we find they do not correctly predict the topological edge states in this interacting system. We find direct study of the quantum numbers characterising the edge states provides a better insight into their topological nature.

arXiv comment18 pages, 17 figures

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Cited by in corpus (1)

• Hole in one: Pathways to deterministic single-acceptor incorporation in Si(100)-2$\times$1