Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$

R. Pachat; D. Ourdani; J. W. van der Jagt; M. -A. Syskaki; A. Di Pietro; Y. Roussigné; S. Ono; M. S. Gabor; M. Chérif; G. Durin; J. Langer; M. Belmeguenai; D. Ravelosona; L. Herrera Diez

doi:10.1103/PhysRevApplied.15.064055

paper

Multiple magneto-ionic regimes in Ta/Co $_{20}$ Fe $_{60}$ B $_{20}$ /HfO $_{2}$

arXiv:2105.05988 · doi:10.1103/PhysRevApplied.15.064055

Abstract

In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA $\to$ PMA regime is found to be significantly faster than the PMA $\to$ IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective damping parameter also shows a marked dependence with gate voltage in the IPA $\to$ PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA $\to$ IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.

Multiple magneto-ionic regimes in Ta/Co $_{20}$ Fe $_{60}$ B $_{20}$ /HfO $_{2}$

Abstract

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Multiple magneto-ionic regimes in Ta/Co20​Fe60​B20​/HfO2​

Abstract

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Multiple magneto-ionic regimes in Ta/Co $_{20}$ Fe $_{60}$ B $_{20}$ /HfO $_{2}$