Spin polarization and magnetotransport properties of systematically disordered thin films
arXiv:2104.14792 · doi:10.1103/PhysRevB.104.134417
Abstract
We investigate the evolution of spin polarization, spontaneous Hall angle (SHA), saturation magnetization and Curie temperature of -ordered FeAl thin films under varying antisite disorder, induced by Ne-ion irradiation. The spin polarization increases monotonically as a function of ion fluence. A relatively high polarization of 46 % and the SHA of 3.1 % are achieved on 40 nm thick films irradiated with 2 10 ions/cm at 30 keV. An interesting divergence in the trends of the magnetization and SHA is observed for low disorder concentrations. The high spin polarization and its broad tunability range make ion-irradiated FeAl a promising material for application in spin electronic devices.
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