Electrical resistivity in 2d Kondo lattice systems

Abstract

I extend the calculations represented in \cite{konav} regarding the resistivity in Kondo lattice materials from $3d$ syatem to $2d$ systems. In the present work I consider a 2d system, and memory function is computed. However, results found in 2d case are different from 3d system . I find that in $2d$ in low temperature regime($k_{B}T\ll {\mu }_d$) resistivity shows power law($\frac{1}{T}$) behaviour and in the high temeprature regime($k_{B}T\gg {\mu }_d$) resistivity varies linearly with temperature. In $3d$ these behaviours are as $\frac{1}{T}$ and as $T^{\frac{3}{2}}$ respectively.

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