Comment on: "Threading dislocation densities in semiconductor crystals: A geometric approach". Phys. Lett. A 376 (2012) 2838-2841

Abstract

We analyze the solution of the Schrödinger equation arising in the treatment of a geometric model introduced to explain the origin of the observed shallow levels in semiconductors threaded by a dislocation density. We show (contrary to what the authors claimed) that the model does not support bound states for any chosen set of model parameters. Assuming a fictitious motion in the $x-y$ plane there are bound states provided that $k\ne 0$ and not only for $k>0$ as the authors believed. The truncation condition proposed by the authors yields only one particular energy for a given value of a chosen model parameter and misses all the others (conditionally solvable problem)