Gas Sensing Properties of single-material SnP3 logical junction via Negative Differential Resistance: Theoretical Study
arXiv:2104.07702
Abstract
The field of 2D materials has gained a lot of attention for vast range of applications. Amongst others, the sensing ability towards harmful gases is the application, which we explored in the present work using quantum-mechanical simulations for the SnP3 material. Its electronic properties, namely 1 and 2 layers being semiconducting, while multilayers being metallic, offer a possibility to build a single-material logical junction. In addition, the harmful gases studied here show physical adsorption with charge transfer from the substrate to the gas molecules. Calculated recovery times show promise of a good sensing material. The I-V characteristics calculated for all cases indicates that SnP3 could be a viable sensing material towards NO gas via negative differential resistance.
References in corpus (7)
- The electronic properties of graphene
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Phosphorene: A New 2D Material with High Carrier Mobility
- Density functional method for nonequilibrium electron transport
- Improvements on non-equilibrium and transport Green function techniques: the next-generation transiesta
- GeP3: A small indirect band gap 2D crystal with high carrier mobility and strong interlayer quantum confinement