Control of band structure of FeSe single crystals via biaxial strain

Abstract

We performed systematic transport measurements on FeSe single crystals with applying in-plane biaxial strain $\epsilon$ ranging from -0.96% to 0.23%. Biaxial strain was introduced by firmly gluing samples to various substrate materials with different thermal expansion. With increasing $\epsilon$, structural and superconducting transition temperatures monotonically increased and decreased, respectively. We analyzed magneto-transport results using a compensated three-carrier model. The evaluated densities of hole and electron carriers systematically changed with strain. This indicates that we succeeded in controlling the band structure of single-crystalline FeSe.

9 pages, 12 figures

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• Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T
• In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF
• Studies of superconductivity of Fe chalcogenides in films grown by PLD technique
• Superconducting critical temperature and dimensionality tuning of RbV${}_3$Sb${}_5$ via biaxial strain
• Evolution of charge dynamics in FeSe${}_{1-x}$Te${}_x$: Effects of electronic correlations and nematicity
• Fabrication of oxide/FeSe multilayer films using the PLD technique