Comment on "Direct observation of excitonic instability in Ta${}_2$NiSe${}_5$" [arXiv:2007.08212 (2020)]

Abstract

The origin of the second order phase transition at 328K in Ta${}_2$NiSe${}_5$, a prominent candidate for direct gap excitonic insulator, remains under fervent debate. The driving force for the transition can be revealed by identification of the soft mode's origin that may be deducted from polarization resolved Raman scattering experiments. Such studies were recently reported in [arXiv:2007.07344 (2020)], [arXiv:2102.07912 (2021)], [arXiv:2007.01723 (2020)] and [arXiv:2007.08212 (2020)]. In this Comment, it is shown that the parameters derived in a recent arXiv by Kwangrae Kim et. al. [arXiv:2007.08212 (2020)], including the Weiss temperature for excitonic transition, are based on inconsistent data.

References in corpus (9)

• Excitonic Bose-Einstein condensation in Ta2NiSe5 above room temperature
• Nature of symmetry breaking at the excitonic insulator transition: Ta${}_2$NiSe${}_5$
• Charge Nematicity and Electronic Raman Scattering in Iron-based Superconductors
• Giant exciton Fano resonance in quasi-one-dimensional Ta${}_2$NiSe${}_5$
• Electron-Phonon Coupling Mode in Excitonic Insulator
• Orthorhombic-to-monoclinic transition in Ta${}_2$NiSe${}_5$ due to a zone-center optical phonon instability
• Phononic soft mode and strong electronic background behavior across the structural phase transition in the excitonic insulator Ta${}_2$NiSe${}_5$ (with Erratum)
• Infrared phonon spectra of quasi-one-dimensional Ta${}_2$NiSe${}_5$ and Ta${}_2$NiS${}_5$
• Doping-controlled transition from excitonic insulator to semimetal in Ta${}_2$NiSe${}_5$

Cited by in corpus (1)

• Failed excitonic quantum phase transition in Ta${}_2$Ni(Se${}_{1-x}$S${}_x$)${}_5$