Ultrahigh energy storage density in epitaxial AlN/ScN superlattices

Abstract

Dielectric and antiferroelectric materials are particularly promising for high-power energy-storage applications. However, relatively low energy density greatly hinders their usage in storage technologies. Here, we report first-principles-based calculations predicting that epitaxial and initially non-polar AlN/ScN superlattices can achieve an ultrahigh energy density of up to 200 J/cm${}^{\text{3}}$, accompanied by an ideal efficiency of 100%. We also show that high energy density requires the system being neither too close nor too far from a ferroelectric phase transition under zero electric field. A phenomenological model is further proposed to rationalize such striking features.

6 pages, 2 figures

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Cited by in corpus (7)

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• Towards a deeper fundamental understanding of (Al,Sc)N ferroelectric nitrides