Quasi-quantized Hall response in bulk InAs

Abstract

The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE),exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets that are yet characterized by a 3D anisotropic Fermi surface. However, it is predicted that the quasi-quantized 3D version of the 2D QHE should occur in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we compare the observation of quasi-quantized plateau-like features in the Hall conductivity of then-type bulk semiconductor InAs with the predictions for the 3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with $\sqrt{2/3}{k}_F^z/\pi$ in units of the conductance quantum and is accompanied by a Shubnikov-de Haas minimum in the longitudinal resistivity, consistent wit the results of calculations. This confirms the suggestion that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields

References in corpus (9)

• Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP
• Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe5
• Theory of the Three Dimensional Quantum Hall Effect in Graphite
• Explanation for the Resistivity Law in Quantum Hall System
• Origin of the quasi-quantized Hall effect in ZrTe5
• Dimensional reduction, quantum Hall effect and layer parity in graphite films
• Integer quantum Hall transition in a $\text{fraction}$ of a Landau level
• Synthetic dimensions and topological chiral currents in mesoscopic rings
• Derivative relations between electrical and thermoelectric quantum transport coefficients in graphene